advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 60v single drive requirement r ds(on) 100m fast switching characteristic i d 9a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maixmum thermal resistance, junction-case 10.0 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 201126071 thermal data parameter operating junction temperature range -55 to 150 storage temperature range total power dissipation 12.5 -55 to 150 continuous drain current, v gs @ 10v 5.7 pulsed drain current 1 30 gate-source voltage 20 continuous drain current, v gs @ 10v 9 parameter rating drain-source voltage 60 rohs-compliant product 1 AP9977AGH a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 100 m v gs =4.5v, i d =4a - - 165 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5 - s i dss drain-source leakage current (t j =25 o c) v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =48v ,v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =5a - 7 12 nc q gs gate-source charge v ds =48v - 1 - nc q gd gate-drain ("miller") charge v gs =10v - 2.4 - nc t d(on) turn-on delay time 2 v ds =30v - 4 - ns t r rise time i d =5a - 12 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 12 - ns t f fall time r d =6 - 2.3 - ns c iss input capacitance v gs =0v - 210 340 pf c oss output capacitance v ds =25v - 35 - pf c rss reverse transfer capacitance f=1.0mhz - 25 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =5a, v gs =0 v , - 22 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 AP9977AGH this product has been qualified for consumer market. applications or uses as criterial component in life support
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP9977AGH 0 4 8 12 16 20 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g = 4 .0v 0 4 8 12 16 20 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g = 4 .0v 70 80 90 100 110 120 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9977AGH q v g 10v q gs q gd q g charge 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0246810 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =48v i d =5a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
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